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用金属有机化学气相外延生长并制作了 1.3μm脊型波导偏振无关半导体光放大器集成模斑变换器 ,器件有源区为同时采用压应变量子阱和张应变量子阱的混合应变量子阱结构以获得TE和TM偏振模式的增益平衡 ,模斑变换器采用一种新型脊型侧向锥形波导结构 ;集成模斑变换器的半导体光放大器远场发散角为 12°× 15° ,接近圆形光斑 ,与平头标准单模光纤耦合损耗为 - 2 .6dB ,在水平和垂直方向上的 - 1dB耦合对准容差分别为± 2 .3μm和± 1.6 μm ;在 2 0 0mA偏置电流下 ,半导体光放大器小信号增益近 2 4dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 .6dB。
The metal-organic chemical vapor-phase epitaxy was used to fabricate a 1.3μm ridge-waveguide polarization-independent semiconductor optical amplifier integrated mode-shift converter. The active region of the device was a mixed strain-type quantum well structure with both compressive and tensile strain quantum wells TE and TM polarization mode gain balance, the use of a new type of ridged side tapered waveguide waveguide structure; integrated mode changer semiconductor optical amplifier far-field divergence angle of 12 ° × 15 °, close to the circular spot , The coupling loss with flat-head standard single-mode fiber is -2.6dB, and the tolerance of - 1dB coupling alignment in horizontal and vertical directions is ± 2μm and ± 1.6μm respectively. Under the bias current of 200mA, Optical amplifier small signal gain of nearly 2 4dB, in the 12 80 ~ 1340nm wavelength range of polarization sensitivity is less than 0.6dB.