最近开展的一项国际合作项目研究小组在蓝宝石衬底上制作了一种难以置信的超高质量GaN外延层。这项制备工艺仅需要单步外延生长就可以实现。来自加州大学洛杉矶分校的谢tahong说:“我们希望这项关键技术可以运用到那些需要高性能材料的器件结构上。这些器件包括激光器、限制功率缩放 A recent research project on international cooperation projects on the sapphire substrate produced an incredible ultra-high quality GaN epitaxial layer. This preparation process can only be achieved by single-step epitaxial growth. Xie Tahong from UCLA said: ”We hope this key technology can be applied to those structures that require high-performance materials such as lasers, limited power scaling