论文部分内容阅读
哪里是大规模集成电路的极限?大规模集成电路(LSI)的进展需要所增加的功能性、快速和经济的综合。 较好的晶片处理,新异的线路技术或这些新的综合正在坚定地将这一极限推向前移。立即在很小成本的条件下,追求LSI的无限功能的最终目标的原始方法将在这次会议中受到强调。 一份报告将讨论隐埋负载逻辑如何合并在同一块CMOS电路块和SI(?)L上以扩大LSI的特长。然后报导完全和NMOSRAM共容并提供低备用功耗能力,而保留其所保护的存贮器的其他特性。经济费用极小的电池备用电路怎样利用隐埋—沟通MOS FET(金属氧化物半导体场效应晶体管)方法使硅上MOS突破109赫的界限,把它(?)作为关于绝对速度的比(?)中的竞争者的例子,将加以讨论。其所获得的性能是与GaAs以及
Where is the limit of large scale integrated circuits? The advances in large scale integrated circuits (LSIs) require increased functionality, speed, and economy. Better wafer handling, exotic circuit technologies, or these new integrations are firmly pushing this limit forward. Immediately at a very low cost, the original method of pursuing the ultimate goal of LSI’s unlimited capabilities will be emphasized at this conference. A report will discuss how the buried load logic can be combined on the same CMOS circuit block and SI (?) L to expand LSI’s strengths. The report then fully encapsulates NMOSRAM and provides low standby power while retaining other features of the memory it protects. How Battery Backup Circuits With Minimal Costs How to use the buried-communicating MOS FET (Metal Oxide Semiconductor Field Effect Transistor) method to make the MOS on the silicon break the 109 Hz limit and use it as the ratio (?) To the absolute speed In the example of competitors, will be discussed. Its performance is obtained with GaAs as well