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在分析研究Si1 -xGex 材料多子迁移率模型的基础上 ,建立了Si1 -xGex 材料电阻率与其Ge组分、掺杂浓度及温度关系的曲线谱图 .同时 ,通过对半导体材料掺杂浓度各种表征技术的分析和实验研究 ,提出了采用四探针法表征Si1 -xGex 材料掺杂浓度的技术 .此表征技术与Si材料掺杂浓度的在线检测技术兼容 ,且更加简捷 .此表征技术的可行性通过实验及对Si1 -xGex 材料样品掺杂浓度的理化分析得到了验证
Based on the analysis of multimode mobility model of Si1-xGex material, a curve of resistivity of Si1-xGex material and its Ge composition, doping concentration and temperature is established. At the same time, the doping concentration of semiconductor material The characterization techniques are analyzed and experimentally studied, and the technique of using the four-probe method to characterize the doping concentration of Si1-xGex materials is proposed. The characterization technique is compatible with the on-line detection technique of doping concentration of Si materials and is more simple. Feasibility Verified by physical and chemical analysis of doping concentrations of Si1-xGex material samples