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研究ＫＴｉＯＡｓＯ_４晶体的生长缺陷，对于改善它的性能和应用前景，有很大的意义．本文利用化学腐蚀光学显微术和同步辐射Ｘ射线形貌术研究了ＫＴｉＯＡｓＯ_４晶体的缺陷，实验结果表明，两种腐蚀剂对于显示ＫＴＡ晶体的表面缺陷效果显著，ＫＴＡ晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物．讨论了这些缺陷形成的原因。
Study of KTiOAsO_4 crystal growth defects, to improve its performance and application prospects, of great significance. In this paper, chemical etching optical microscopy and synchrotron radiation X-ray topography study of KTiOAsO_4 crystal defects, the experimental results show that the two kinds of etchant KTA crystal surface defects show significant effect, the main defects in KTA crystal ferroelectric domain , Growth layer, fan sector, dislocation and wrap. Discusses the reasons for these defects.