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本研究采用等摩尔分数的Sb元素替换Ga2Te3中的Ga元素,并利用放电等离子烧结技术制备Ga1.9Sb0.1Te3合金,研究其微观结构和热电性能。结果表明,添加Sb元素后,材料的Seebeck系数为130～240μV/K,明显低于单晶Ga2Te3,电导率为3600～1740??1·m?1,至少是单晶Ga2Te3的17倍,热导率提高近25%。在649K时Ga1.9Sb0.1Te3合金的热电优值(ZT)达到最大值0.1,是同温度下单晶Ga2Te3ZT值的3倍。
In this study, the equimolar fraction of Sb was used to replace Ga in Ga2Te3, and the Ga1.9Sb0.1Te3 alloy was prepared by spark plasma sintering. The microstructure and thermoelectric properties of Ga1.9Sb0.1Te3 alloy were investigated. The results show that after the addition of Sb, the Seebeck coefficient of the material is 130-240μV / K, which is obviously lower than that of the single crystal Ga2Te3. The conductivity is 3600-1740-1 m-1, at least 17 times that of single-crystal Ga2Te3, Conductivity increased by nearly 25%. In 649K Ga1.9Sb0.1Te3 thermoelectric figure of merit (ZT) reaches a maximum value of 0.1, is the same temperature single crystal Ga2Te3ZT value of 3 times.