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HgCdTe表面/界面特性对器件性能具有重要的影响,表面/界面的状态主要依赖于表面处理和钝化工艺。采用Br2/CH3OH腐蚀液对液相外延(LPE)生长的中波HgCdTe薄膜进行表面处理后,使用Cd Te/Zn S复合钝化技术进行表面钝化,制备了相应的MIS器件并进行器件C-V测试。结果表明,HgCdTe/钝化层界面固定电荷极性为正,面密度为2.1×1011 cm-2,最低快界面态密度为1.43×1011 cm-2·e V-1,在10 V栅压极值下慢界面态密度为4.75×1011 cm-2,较低的快界面态密度体现出了CdTe/ZnS复合钝化技术的优越性。
HgCdTe surface / interface characteristics have a significant impact on device performance, and the state of the surface / interface relies mainly on surface processing and passivation processes. The surface HgCdTe films grown by liquid phase epitaxy (LPE) were treated with Br2 / CH3OH etching solution and then passivated by Cd Te / Zn S passivation technology. The corresponding MIS devices were fabricated and the device CV test was performed . The results show that the fixed charge polarity of HgCdTe / passivation layer is positive, with an areal density of 2.1 × 1011 cm-2 and the lowest fast interface density of 1.43 × 1011 cm-2 · e V-1. The slow interface state density is 4.75 × 1011 cm-2. The lower fast interface density reflects the superiority of CdTe / ZnS composite passivation.