以单质硼和高纯石墨的混合粉末压制成型的靶材作为靶源,采用过滤阴极真空电弧技术制备不同硼含量的掺硼四面体非晶碳膜.分别采用四探针法、阻抗分析仪和电化学界面对薄膜的变温电导率、I-V特性和C-V特性进行了测试和研究.实验结果表明,当B含量由0增加至6.04 at%时,薄膜的室温电导率先逐渐增大而后逐渐减小,相应薄膜的电导激活能先逐渐减小而后逐渐增大,并在2.13 at%时分别出现最大和最小值1.42×10-7S/cm和0.1 eV.此外,掺硼四面体非晶碳/n型硅异质结的I-V曲线表现出典型的整流特性,表明p-n结二极管已经形成,且结两端的掺杂能级在空间上连续统一. A boron-doped tetrahedron amorphous carbon film with different boron content was prepared by using filtered cathode vacuum arc technique with the targets of mixed powder compacting of pure boron and high-purity graphite as the target.The four-probe method, impedance analyzer and The electrochemical interface was used to test the temperature-dependent conductivity, the IV characteristics and the CV characteristics of the films.The experimental results show that the room temperature conductivity of the films first increases gradually and then decreases gradually when the content of B increases from 0 to 6.04 at% The conductivities of corresponding films decreased gradually and then increased gradually, and reached the maximum and minimum of 1.42 × 10-7S / cm and 0.1 eV respectively at 2.13 at%. In addition, the boron-doped tetrahedron amorphous carbon / n-type The IV curve of the silicon heterojunction shows a typical rectification characteristic, indicating that the pn junction diode has been formed and the doping levels at both ends of the junction are spatially uniformed.