以GaN为代表的第三代半导体材料,是制造短波长高功率发光器件和高温大功率电子器件的具有代表性的半导体材料。到目前为止,国际上高功率蓝色发光二极管(LED)、绿色LED、白光LED、蓝紫色LED及激光器等已实现了批量生产,走向了商业市场。 GaN半导体材料与器件的研究已历时30多年。前20年进展缓慢,未能研制出实用化的器件。近十年来,在日本获得了突 The third generation of semiconductor materials, typified by GaN, is a representative semiconductor material for manufacturing short-wavelength high-power light-emitting devices and high-temperature high-power electronic devices. So far, the international high-power blue light-emitting diode (LED), green LED, white LED, blue-violet LED and laser mass production has been achieved, to the commercial market. GaN semiconductor materials and devices have been studied for more than 30 years. The first two decades of slow progress, failed to develop a practical device. Over the past decade, Japan won the sudden