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对1 Mb静态随机存取存储器(SRAM)进行了不同偏置条件下的总剂量辐照效应研究。结果表明,试验选取的CMOS SRAM器件为总剂量辐射敏感器件,辐照偏置条件对器件的电参数退化和功能失效有较大影响。在三种偏置条件中,静态加电为最劣偏置,其次是工作状态,浮空状态时器件的辐射损伤最小。在工作状态和静态加电两种偏置条件下,静态功耗电流的退化与器件功能失效密切相关,可作为器件功能失效的预警量。
The total dose radiation effect of 1 Mb static random access memory (SRAM) under different bias conditions was studied. The results show that the selected CMOS SRAM device is a total dose radiation sensitive device, and the irradiation bias conditions have a great influence on the electrical parameter degradation and the functional failure of the device. Among the three bias conditions, the static power-on is the worst-case bias, followed by the working state, and the device has the least radiation damage in the floating state. Under the biasing conditions of working state and static power-on, the degradation of quiescent power current is closely related to the function failure of the device, which can be used as pre-warning for the failure of the device function.