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针对90 nm CMOS(Complementary Metal Oxide Semiconductor)工艺,采用三维数值模拟方法,研究了反相器中NMOS(Negative channel-Metal-Oxide-Semiconductor)晶体管与PMOS(Positive channel-Metal-Oxide-Semiconductor)晶体管的单粒子瞬变(SET,Single Event Transient)电流脉冲,深入分析了PMOSFET(Positive channel-Metal-Oxide-Semiconductor FieldEffect Transistor)与NMOSFET(Negative channel-Metal-Oxide-Semiconductor Field-Effect Transistor)发生单粒子效应时电荷输运过程和电荷收集机理.研究结果表明,由于电路耦合作用,反相器中晶体管的电荷收集与单个晶体管差异显著;反相器中PMOS晶体管电荷收集过程中存在寄生双极放大效应,NMOS晶体管中不存在寄生双极放大效应;由于双极放大效应,90 nm工艺下PMOS晶体管产生的SET电压脉冲比NMOS晶体管产生的电压脉冲持续时间更长,进而导致PMOS晶体管的SET效应更加敏感.研究结果为数字电路SET的精确建模、进行大规模集成电路SET效应模拟提供了参考依据.
Aiming at 90 nm CMOS (Complementary Metal Oxide Semiconductor) process, a three-dimensional numerical simulation method is used to study the relationship between the NMOS (Negative Channel-Metal-Oxide-Semiconductor) transistor and the PMOS (Positive Channel-Metal-Oxide-Semiconductor) Single Event Transient (SET) current pulse, the single-particle effect of a positive channel-metal-oxide-semiconductor field effect transistor (PMOSFET) and a negative channel-metal-oxide- Charge transport process and charge collection mechanism.The results show that due to the circuit coupling, the charge collection of the transistors in the inverter is significantly different from that of the single transistor. The parasitic bipolar amplification effect exists in the charge collection process of the PMOS transistor in the inverter, The parasitic bipolar amplification effect does not exist in the NMOS transistor. Due to the bipolar amplification effect, the SET voltage pulse generated by the PMOS transistor in the 90 nm process lasts longer than the voltage pulse generated by the NMOS transistor, which further causes the SET effect of the PMOS transistor to be more sensitive. The result of the study is the exact modeling of the digital circuit SET, carried out large The scale IC SET effect simulation provides a reference.