研究了溶液表面处理对AlGaN欧姆接触的影响及机理。用氟硝酸(HNO3+HF)、稀盐酸(HCl)和硫代乙酰胺(CS3CSNH2)溶液处理AlGaN表面后,Ti/Al/Ti/Au电极的比接触电阻率有显著的降低。样品表面Ga3d与O1s的X射线光电子能谱(XPS)测试结果显示:氧元素含量明显降低,表明这三种溶液可以有效地去除AlGaN表面氧化层,其中CS3CSNH2效果最佳;Ga3d峰位在表面处理后发生蓝移现象,相当于AlGaN表面处的费米能级向导带一侧移动,使电子在隧穿过程中的有效势垒高度降低。以上两个因素均对优化AlGaN/GaN欧姆接触有十分重要的意义。 The effects of solution surface treatment on the ohmic contact of AlGaN were investigated. The specific contact resistivity of Ti / Al / Ti / Au electrode decreased significantly after the AlGaN surface was treated with fluorinated nitric acid (HNO3 + HF), dilute hydrochloric acid (HCl) and thioacetamide (CS3CSNH2) X-ray photoelectron spectroscopy (XPS) test results of Ga3d and O1s on the sample surface show that the content of oxygen is obviously decreased, indicating that the three solutions can effectively remove the surface oxide layer of AlGaN, of which CS3CSNH2 has the best effect. The Ga3d peak is in the surface treatment Blue shift after the phenomenon, the equivalent of AlGaN surface at the Fermi level to the conduction band to move the side of the electron tunneling process in the effective barrier height is reduced. Both of these factors are very important for optimizing the ohmic contact of AlGaN / GaN.