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利用俄罗斯科学院研制的CVD (Chemicalvapordeposition)软件计算分析了CH4 H2 S体系在 10 132 5Pa、90 0～ 130 0K ,CO H2 S体系在 10 132 5Pa、90 0～ 12 0 0K下不同硫添加物含量及温度对碳沉积率的影响 ;绘制了碳沉积边界曲线 ,预测了碳沉积区 ;计算筛选出了适合于不同体系制备碳纳米管的催化剂。证明了加入硫添加物可以提高碳纳米管沉积率
The content of different sulfur additives in CH4 H2S system at 10 132 5Pa, 90 0 ~ 130 0K, CO H2 S system at 10 132 5Pa, 90 0 ~ 1200K was calculated and analyzed by chemical vapor deposition (CVD) software developed by the Russian Academy of Sciences. The effect of temperature on the carbon deposition rate was plotted; the carbon deposition boundary curve was plotted and the carbon deposition area was predicted; and the catalyst suitable for the preparation of carbon nanotubes in different systems was screened out. It is proved that adding sulfur additive can increase the deposition rate of carbon nanotubes