采用原子层沉积(ALD)的方法,选择四二乙基氨基铪(TDEAH)和水作为反应前驱体,在p型(100)单晶硅衬底上制备了HfO_2高介电质薄膜。系统研究了前驱体流量、反应气压、反应温度等工艺参数对HfO_2薄膜生长质量的影响。通过工艺调控,发现存在两种薄膜生长模式:类CVD(化学气相沉积)生长模式和ALD生长模式。发现薄膜的生长模式主要依赖于制备工艺参量:脉冲参量M和冲洗参量Q,通过优化工艺参数,可实现薄膜生长由类CVD生长模式向ALD生长模式的转变,并获得了0.1 nm/周次的最优薄膜生长速率。同时,薄膜微结构与表面形貌的表征结果表明:薄膜的非晶晶态转变受温度和膜厚两个因素共同控制。 HfO_2 high dielectric films were prepared on p-type (100) single-crystal Si substrates by atomic layer deposition (ALD) method using tetraethylammonium ethoxide (TDEAH) and water as reaction precursors. The effects of process parameters such as precursor flow rate, reaction pressure and reaction temperature on the growth quality of HfO_2 films were systematically studied. Through the process control, we found that there are two kinds of film growth mode: CVD (chemical vapor deposition) growth mode and ALD growth mode. It was found that the growth mode of the film mainly depends on the preparation process parameters: the pulse parameter M and the processing parameter Q, and the film growth can be changed from the CVD growth mode to the ALD growth mode by optimizing the process parameters, and the 0.1 nm / Optimal film growth rate. At the same time, the characterization of the microstructure and surface morphology of the thin film shows that the amorphous state transition of the thin film is controlled by both the temperature and the film thickness.