The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20 μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm. The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP / AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20 μm-long region at each facet of laser diode has been formed to As a result, the COD threshold has been significantly improved due due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW Continuous wave output power with the fundamental transverse mode has been realized at room temperature for 3.5 μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W / A at 40 mW. The lasing wavelength is 656 nm .