论文部分内容阅读
研究了金属有机化合物气相外延（ＭＯＶＰＥ）方法在（０００１）氧化铝基底上生长的ＧａＮ 薄膜的微结构，目的在于解释ＧａＮ缓冲层在二步法生长过程中的作用及其对外延层晶体质量的影响．在缓冲层中观察到了高密度的结构缺陷，并发现了两种晶体结构（立方和六角）的ＧａＮ．进而对两种结构ＧａＮ的成因进行讨论，并对缓冲层和外延层中结构缺陷的关系进行了研究．
The microstructure of a GaN thin film grown on a (0001) alumina substrate by a metal organic compound vapor phase epitaxy (MOVPE) method was investigated in order to explain the role of the GaN buffer layer in a two-step growth process and its effect on the crystal quality of the epitaxial layer influences. High-density structural defects were observed in the buffer layer and two types of GaN (cubic and hexagonal) GaN were found. Then, the causes of the two structures of GaN are discussed, and the relationship between the structural defects in the buffer layer and the epitaxial layer is studied.