论文部分内容阅读
利用射频磁控溅射法在石英衬底上制备得到高质量的锑掺杂二氧化锡(ATO)透明导电薄膜,研究了溅射压强对ATO薄膜的结构和光电性能的影响。结果表明:溅射压强对ATO薄膜的相结构、择优生长取向和结晶质量均有一定的影响。所制薄膜的电阻率随着溅射压强的增加有先减小后增大的规律,并在溅射压强为1 Pa时取得最小值(1.99×10–3?·cm)。不同溅射压强下制备的薄膜在可见光区的透过率均在85%以上。
High-quality antimony-doped tin oxide (ATO) transparent conductive thin films were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering pressure on the structure and photoelectric properties of ATO thin films were investigated. The results show that the sputtering pressure has certain influence on the phase structure, preferred orientation and crystal quality of ATO films. The resistivity of the films decreases first and then increases with the increase of sputtering pressure, and the minimum value (1.99 × 10-3? · Cm) is obtained when the sputtering pressure is 1 Pa. The films prepared under different sputtering pressure have the transmittance over 85% in the visible light region.