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基于Sentaurus TCAD仿真软件,在外延层参数与生产工艺确定的情况下,通过调整元胞的多晶硅长度优化特征导通电阻,并通过对版图元胞面积的准确计算,设计了三款导通电阻目标值为2.4,3.0和3.3Ω的高压功率VDMOS芯片。流片结果显示,导通电阻的平均值与版图计算值吻合度均超过96%,表明了该设计方法、仿真参数及版图设计具有较高的可靠性。
Based on the Sentaurus TCAD simulation software, the on-resistance of the cell is optimized by adjusting the polysilicon length of the cell and the accurate calculation of the cell area of the layout, three on-resistance targets are designed according to the parameters of the epitaxial layer and the manufacturing process. High-voltage VDMOS chips with values of 2.4, 3.0 and 3.3Ω. The results of flow sheet show that the average value of on-resistance is in good agreement with the calculated value of layout in more than 96%, indicating that the design method, simulation parameters and layout design have high reliability.