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采用TSMC0.18μmCMOS工艺,利用ADS2008软件仿真,设计了一种高增益的CMOS低噪声放大器。与传统的共源共栅结构相比,该电路在晶体管M3的栅源极处并入电容C1,以增加系统抗干扰能力;并在级间引入一并联电感和电容与寄生电容谐振,以提高增益。仿真结果表明,在2.4 GHz工作频率下,该电路的增益大于20 dB,噪声系数小于1 dB,工作电压为1.5 V,功耗小于5 mW,且输入输出阻抗匹配良好。
Using TSMC0.18μmCMOS process, using ADS2008 software simulation, designed a high-gain CMOS low noise amplifier. Compared with the conventional cascode structure, the circuit incorporates the capacitor C1 at the gate-source of the transistor M3 to increase the anti-interference ability of the system; and a parallel inductor and capacitor are introduced between the stages to resonate with the parasitic capacitor to improve Gain. The simulation results show that the gain of the circuit is greater than 20 dB, the noise figure is less than 1 dB, the operating voltage is 1.5 V, the power consumption is less than 5 mW at 2.4 GHz operating frequency, and the input-output impedance matching is good.