论文部分内容阅读
利用化学气相沉积工艺制备了SiC涂层 ,对涂层进行了SEM及XRD分析。考察了温度、载气和稀释气体对涂层微观结构的影响 ;对不同基体进行了对照试验。在 110 0℃～ 130 0℃沉积时 ,随着温度的升高 ,SiC涂层沉积速度加快 ,SiC颗粒变大 ,同时颗粒间的孔隙也变大 ,涂层的致密度降低 ;Ar流量相对小时 ,制备的涂层致密、光滑。以SiCp/SiC作基体时 ,涂层和基体结合得很牢固 ,SiC颗粒会向基体中渗透 ,从而增强了涂层和基体之间的结合力
The SiC coating was prepared by chemical vapor deposition. The coating was analyzed by SEM and XRD. The effects of temperature, carrier gas and diluent gas on the microstructure of coatings were investigated. The control experiments on different substrates were carried out. When the temperature is increased from 110 ℃ to 130 ℃, the deposition rate of SiC coating increases and the size of SiC particles increases. At the same time, the intergranular pores become larger and the densification degree decreases. When the Ar flow rate is relatively low The prepared coating is dense and smooth. When SiCp / SiC is used as the matrix, the coating and the matrix are firmly bonded, and the SiC particles penetrate into the matrix, thereby enhancing the adhesion between the coating and the matrix