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英国雪菲尔大学(SheffieldUniversity)的一支研究团队最近在《应用物理学快报》(AppliedPhysicsLetter)期刊上发布在半极性氮化镓(GaN)或蓝宝石基材上生长LED的最新成果。利用在M-Plane蓝宝石基板上生长的GaN制造的微柱阵列模板,研究人员能在其上过度生长的半极性GaN(11-22)上生长出具有更高量子效益的LED。
A team of researchers at Sheffield University in the United Kingdom recently released the latest results of growing LEDs on semipolar GaN or sapphire substrates in the Applied Physics Letters. Using microcolumn array templates made of GaN grown on M-Plane sapphire substrates, researchers are able to grow LEDs with higher quantum efficiency on semipolar GaN (11-22) overgrowth.