纳米多孔硅是一种潜在的化学和生物传感材料,本文采用电化学腐蚀法制备纳米多孔硅。采用SEM技术分析多孔硅的表面形貌,研究了腐蚀条件对多孔硅的孔隙率、厚度、I-V特性的影响。结果表明,多孔硅的孔隙率随着腐蚀电流密度和腐蚀时间的增加而呈线性增大趋势;其厚度随着腐蚀电流密度的增加而近似呈线性增大趋势,随腐蚀时间的成倍增加而显著增大;其I-V特性表现出非整流的欧姆接触。 Nanoporous silicon is a potential chemical and biological sensing material. In this paper, nanoporous silicon is prepared by electrochemical etching. The surface morphology of porous silicon was analyzed by SEM, and the influence of corrosion conditions on the porosity, thickness and I-V properties of porous silicon was investigated. The results show that the porosity of porous silicon increases linearly with the increase of corrosion current density and corrosion time. The thickness of porous silicon increases linearly with the increase of corrosion current density. With the increase of corrosion time Significantly increases; its IV characteristics exhibit non-rectified ohmic contacts.