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通过传统光电导衰退法和微波反射光电导衰退法两种方法对长波、中波及短波碲镉汞材料进行了载流子寿命测试,并对结果进行了比较。通过对比发现这两种方法测得的中波和短波材料的结果相差不大。但是对于长波材料,载流子寿命测试结果相差比较大,主要是因为长波材料寿命比较小,在相同的光激发条件下和偏流下,光电导灵敏度小,从而导致测出的信号小,在拟合的过程中偏差较大,导致载流子寿命相差较大。另外,用两种方法在同一短波材料的不同区域进行测试,传统光电导衰退法在材料电极附近测试结果明显偏小,电极区载流子寿命不到其他部分的50%。说明传统光电导衰退法测试载流子寿命受电极的影响比较大。
The carrier lifetime test was carried out on the long-wave, medium-wave and short-wave HgCdTe materials by the traditional photoconductive decay method and the microwave reflection photoconductive decay method, and the results were compared. By comparing the two methods found in the measured medium wave and short wave material results are not much difference. However, for the long-wave material, the difference of the carrier lifetime test results is relatively large, mainly because the long-wave material has a relatively small lifetime, and under the same light excitation condition and bias current, the photoconductive sensitivity is small, resulting in a small measured signal. The larger deviation in the process, resulting in a large difference between the carrier life. In addition, two methods are used to test the same short-wave material in different regions. The conventional photoconductivity decay test results are obviously smaller near the material electrode, and the lifetime of the carrier in the electrode region is less than 50% of the other parts. Description traditional photoconductive decay test carrier lifetime by the impact of the electrode is relatively large.