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用 PECVD淀积了低介电常数的掺氟氧化硅介质薄膜 ,Si F4 的流量达到 60 sccm时 ,薄膜的相对介电常数可以降低到 3.2。对试样的 FTIR分析表明 ,薄膜中大部分的氟以 Si- F键形式存在。C- V特性测试表明 ,薄膜介电常数随氟含量的增加而减小 ,但薄膜的吸水性随氟含量的增加而变大。并进一步讨论了介电常数和薄膜稳定性与薄膜中氟原子含量之间的内在联系。
PECVD deposited a low dielectric constant of fluorine-doped silicon oxide dielectric film, Si F4 flow rate of 60 sccm, the relative dielectric constant of the film can be reduced to 3.2. FTIR analysis of the sample showed that most of the fluorine in the film exists in the form of Si-F bonds. The C-V characteristic test shows that the dielectric constant of the film decreases with the increase of the fluorine content, but the water absorption of the film becomes larger with the increase of the fluorine content. The intrinsic relationship between the dielectric constant and film stability and the content of fluorine atoms in the film was also discussed.