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在辐射环境中,电子系统常用的半导体器件及电路会出现不同程度的性能退化,甚至发生失效。其根本原因来源于辐射致组成半导体器件的材料内部缺陷的产生和积累。表征和分析辐射致材料内部缺陷的种类、浓度、分布等信息,是半导体材料辐射效应研究的重要内容。从辐射致缺陷微观形貌、结构特征,及其引起的宏观电效应三方面,归纳总结了几种重要的半导体材料辐射效应的表征和分析方法,分析了每种方法的优缺点及适用范围,并指出半导体材料辐射效应表征与分析技术发展的方向,可为电子器件、半导体材料辐射效应领域的研究人员提供参考。
In the radiation environment, semiconductor devices and circuits commonly used in electronic systems suffer from various degrees of performance degradation or even failure. The root cause is the generation and accumulation of internal defects in the materials that make up the semiconductor device by radiation. Characterization and analysis of radiation-induced defects in the material type, concentration, distribution and other information, is an important part of the study of radiation effects of semiconductor materials. This paper summarizes the characterization and analysis methods of several important radiation effects of semiconductor materials from three aspects of micro-morphology, structural features and macro-electric effects caused by radiation, analyzes the advantages and disadvantages of each method and its applicable scope, And pointed out that the semiconductor materials, radiation effects characterization and analysis of the direction of technology development, for electronic devices, semiconductor materials, radiation effects field researchers to provide a reference.