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在考虑准饱和效应的情况下,给出了能够精确描述漂移区纵向电场对电子迁移率影响的微分方程,建立了包括用解析方法求解该方程、漂移区电压降求解方法等在内的一整套处理方法,并由此提出了VDMOS的一种改进物理模型。计算结果表明,与Kim Yeong-Seuk等人提出的模型相比,该改进模型在更大的工作电压范围内都具有较高的计算精度,特别是在VDMOS发生准饱和效应时,计算精度有较大程度的提高,更加符合MEDICI的模拟结果。
Considering the quasi-saturation effect, a differential equation that can accurately describe the influence of the longitudinal electric field in the drift region on the electron mobility is given, and a set of equations including analytical methods to solve the equation and the voltage drop solution in the drift region are given Processing method, and thus proposed an improved VDMOS physical model. The results show that compared with the model proposed by Kim Yeong-Seuk et al., The improved model has higher computational accuracy over a larger working voltage range, especially when the quasi-saturation effect of VDMOS occurs To a large extent, more in line with the MEDICI simulation results.