双结深光电二极管包括一深一浅两个光电二极管,深、浅pn结光电二极管的光电流比值I_2/I_1随入射光波长单调增加。文章基于0.5μm CMOS工艺对双结深光电二极管深、浅结光电流进行了数学建模和Matlab仿真。设计了片上信号处理电路,将双结深光电二极管深、浅结光电流比值转换成电压输出。仿真结果表明,信号处理电路的输出与ln(I_2/I_1)具有良好的线性关系。单片集成的CMOS波长检测芯片可用于未知荧光的波长检测和特异性分析。 The double junction deep photodiode includes a deep one shallow one two photodiodes. The ratio of the photocurrent I 2 / I 1 of the deep and shallow pn junction photodiodes monotonously increases with the wavelength of the incident light. Based on the 0.5μm CMOS process, the mathematical modeling and Matlab simulation of deep and shallow junction photocurrent of double junction deep photodiode are carried out. An on-chip signal processing circuit is designed to convert the deep and shallow junction current of the double junction deep photodiode into a voltage output. The simulation results show that the output of the signal processing circuit has a good linear relationship with ln (I_2 / I_1). Monolithically integrated CMOS wavelength detection chip can be used for unknown fluorescence wavelength detection and specificity analysis.