采用分步偏压溅射法，在Ｓｉ（１００）衬底上制备了高质量的ＳｉＣ薄膜．傅里叶红外（ＦＴＩＲ）光谱测试表明，分步偏压法不仅有利于提高ＳｉＣ薄膜的生长速率，同时也有利于ＳｉＣ薄膜的成核生长．通过原子力显微镜（ＡＦＭ）观察到，单一偏压法制备的样品表面有许多的凹坑，而分步偏压法制备的样品表面则没有出现明显的凹坑．因此，采用分步偏压溅射法不仅可以提高薄膜的生长速率，同时也可以减小对薄膜的离子刻蚀作用，改善薄膜的质量． High-quality SiC thin films were prepared on Si (100) substrates by step-and-bias sputtering. Fourier transform infrared spectroscopy (FTIR) spectroscopy showed that the step-and-step bias method is not only conducive to increasing the SiC film growth rate, but also conducive to SiC film nucleation and growth. It was observed by atomic force microscopy (AFM) that there were many pits on the sample surface prepared by the single bias method and no obvious pits on the sample surface prepared by the step-bias method. Therefore, the use of step-bias sputtering method can not only improve the growth rate of the film, but also can reduce the ion etching of the film and improve the quality of the film.