我们采用了脉冲Q开关红宝石激光以(λ=0.6943微米)、脉冲Q开关石榴石激光(λ=1.06微米)和倍频的脉冲石榴石激光(λ=0.53微米)产生n型GaAs表面的欧姆接触;测量了n型GaAs上AuGaNi合金的比接触电阻.实验表明用激光合金化形成了均匀的欧姆接触,这种接触具有比通常的体加热合金化更优越的电学性质和表面状况. We used a pulsed Q-switched ruby ​​laser to produce ohmic contacts on the n-type GaAs surface (λ = 0.6943 μm), pulsed Q-switched garnet laser (λ = 1.06 μm) and frequency doubled pulsed garnet laser (λ = 0.53 μm) The specific electrical contact resistances of AuGaNi alloys on n-type GaAs were measured. The experimental results show that laser alloying produces uniform ohmic contacts with better electrical properties and surface conditions than the usual body alloying.