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碳化硅(SiC)MOSFET作为第三代半导体器件,与硅IGBT相比在高频、高温、高压的工况下性能更加优异。然而在并联应用中,不同器件之间较大的特性参数差异会影响并联均流的动静态特性。现有的SiC MOSFET并联均流研究并没有全面地分析器件参数对并联均流产生的影响。因此,测试了30个器件在通态电阻、阈值电压、跨导和寄生电容上的差异并理论分析了不同特性参数对并联动静态均流所造成的影响,设计了SiC MOSFET并联均流实验的平台,且在排除电路参数以及测量系统可能引入的误差的条件下,针对不同器件参数的差异度进行实验,最后综合理论分析和实验结果,得出SiC MOSFET不同器件特性参数的差异度分别对静动态均流的影响以及这些影响的综合作用关系。
Silicon Carbide (SiC) MOSFET As the third generation semiconductor device, it has more excellent performance under high frequency, high temperature and high pressure compared with silicon IGBT. However, in parallel applications, large differences in characteristic parameters between different devices affect the dynamic and static characteristics of parallel current sharing. The existing research on current sharing of SiC MOSFET in parallel does not fully analyze the influence of the device parameters on the parallel current sharing. Therefore, the difference of on-state resistance, threshold voltage, transconductance and parasitic capacitance of 30 devices was tested and the influence of different characteristic parameters on the parallel current sharing was theoretically analyzed. Platform, and exclude the circuit parameters and the measurement system may introduce errors under the conditions of different devices for different parameters of the experiment, the final theoretical analysis and experimental results obtained SiC MOSFET device characteristics of the different parameters of the difference between static The impact of dynamic current sharing and the combined effect of these effects.