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利用射频等离子体增强化学气相沉积法制备了在太阳电池中用作表面钝化和减反层的SiN_x:H薄膜。制备的折射系数分布在1.72～2.55范围内的一系列薄膜对电阻率为10Ω·cm的p型衬底硅片具有较好的钝化效果。研究给出了SiH_4/NH_3流量比和衬底温度对薄膜折射系数和钝化效果的影响规律,当衬底温度为300℃,SiH_4/NH_3流量比低于50/15时,制备的SiN_x:H薄膜具有优良的减反钝化效果。
The SiN_x: H thin films used as surface passivation and anti-reflection layer in solar cells were fabricated by RF plasma enhanced chemical vapor deposition. A series of thin films with refractive index distribution in the range of 1.72-2.55 were prepared for p-type substrate wafer with resistivity of 10Ω · cm. The effect of SiH_4 / NH_3 flux ratio and substrate temperature on the refractive index and passivation of the films was investigated. The SiN_x: H Film has excellent anti-deactivation passivation effect.