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绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景。采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料。喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54%。对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移。同时0.54%张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差。该材料可进一步用于制备锗微电子和光电子器件。
The strain-on-strain germanium material of insulator is a new type of semiconductor material obtained by energy band engineering to improve the photoelectric properties of germanium materials, and has important application prospect in the fields of microelectronics and optoelectronics. The insulator-on-strain strain germanium material was prepared on silicon-on-insulator (SOI) material using the method of patterning in microelectronics and the technique of using germanium concentration. Raman and room temperature photoluminescence (PL) test results show that the tensile strains of germanium materials with different circular radius are 0.54%. For tensile strain germanium materials on insulator, the effect of strain on the reddish shift of luminescence is stronger than that of quantum wells, which will red shift the direct band-luminescence peak of the strain-on-strain germanium material. At the same time, the direct band luminescence intensity of 0.54% tensile strain germanium material decreases with the increase of the radius of the circle, mainly because of the poor crystal quality of samples with large radius of curvature. The material can be further used to prepare germanium microelectronics and optoelectronic devices.