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提出一种简便可行的ＧｅｘＳｉ１－ｘ异质结无间距定向耦合光开关（ＢＯＡ型－ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｃａｌＡｃｔｉｖｅ）模型分析方法。该方法采用等离子体包散效应分析了这种光开关的电学调制机理；采用异质结超注原理分析了开关的电学性质；并根据典单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ０．０５ＳＩ０．９５／Ｓｉ异质结ＢＯＡ型光开关的结构参数和电学参数。
A simple and feasible GexSi1-x heterojunction pitch-free directional coupling optical switch (BOA-BifurcationOpticalActive) model analysis method. In this method, the electrical modulation mechanism of the optical switch is analyzed by using the plasma cladding effect. The electrical properties of the switch are analyzed by the heterostructure super-injection principle. Based on the single-mode ridge waveguide theory and the above analysis, Structural and Electrical Parameters of Ge0.05SI0.95 / Si Heterojunction BOA Optical Switches Operating with Mode Interferometry.