利用真空蒸发的方法制备ZnSe多晶薄膜,并采用双源法对薄膜进行了Dy的掺杂。用XRD、紫外可见分光光度仪对薄膜的性质进行了表征。结果表明,当Zn、Se原子配比为0.9∶1时可制备较理想的ZnSe多晶薄膜,稀土Dy掺杂并未改变样品的物相结构,但掺杂使薄膜的晶格常数及晶胞体积略有增大,还使得薄膜的晶粒尺寸及压应力变小,掺杂后薄膜的光透射性得到改善。 The ZnSe polycrystalline thin films were prepared by vacuum evaporation, and the doping of Dy films was carried out by dual source method. The properties of the films were characterized by XRD and UV-Vis spectrophotometer. The results show that when Zn and Se atomic ratio is 0.9:1, the ideal ZnSe polycrystalline thin films can be prepared. The rare earth Dy doping does not change the phase structure of the samples. However, the lattice constants and lattice A slight increase in volume also makes the grain size and compressive stress of the film become smaller, and the light transmittance of the film is improved after doping.