论文部分内容阅读
基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更准确的预测模型.
Based on the analysis of the physical mechanism of hole trapping and proton induced interface trapping charge formation, a physical model of ionospheric charge density induced by ionizing radiation and the correlation between the charge density and the dose density of interfacial traps has been established respectively. From the model, The charge density of the two traps induced by radiation at a low dose of irradiation was linearly proportional to the dose of radiation, and the induced charge density of the trap tended to be saturated at moderate to high doses of radiation. The model well describes the charge and charge of these two traps Radiation dose.The relationship between the two charge-induced trap charge densities under low dose irradiation is discussed.It is considered that there is a linear relationship between the two under the low radiation dose and the experimental results verify the correctness of the theoretical model. The model provides a more accurate prediction model for the radiation damage of MOS devices in radiation environment.