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硅通孔(TSV)技术是三维封装的关键技术,对三维IC的可靠性起决定性作用.基于ANSYSWorkbench平台,通过有限元仿真对退火阶段的TSV模型进行热结构耦合分析.比较了二氧化硅(SiO2)介质层与苯并环丁烯(BCB)介质层在不同负载下的热应力,研究了不同填充材料、介质层厚度、通孔直径、深宽比条件下的热应力分布和热应力影响,分析了碳纳米管掺杂的苯并环丁烯(BCB-CNT)介质层的热应力.结果表明,该复合介质层能有效降低热应力,提高了三维IC的可靠性.“,”Through-silicon via (TSV) is the key technology of three-dimensional packaging and has a decisive effect on the reliability of three-dimensional integrated circuit.Based on the ANSYS Workbench platform,an analysis of TSV thermal structure coupling in the annealing stage was carried out according to the finite element method.The thermal stresses of TSV using SiO2 dielectric layer and BCB dielectric layer were compared under different load conditions.Furthermore,the effects of filled material,dielectric layer thickness,hole diameter and aspect ratio on the thermal stress distribution and the thermal stresses were investigated respectively.At last,the thermal stress under BCB-CNT mixed case was discussed in detail The results showed that the composite dielectric materials could decrease the thermal stress effectively and improve the reliability of three-dimensional integrated circuits.