论文部分内容阅读
采用金属有机化合物汽相外延法 (MOVPE)和多层膜互扩散生长工艺 (IMP)在不同的生长条件下生长了许多Hg1-xCdxTe/GaAs(2 11)薄膜样品 ,并对样品进行了傅利叶红外透射 (FTIR)和范德堡Hall测量 ;通过对许多实验数据进行系统的对比分析 ,总结了薄膜的生长规律 ,并对这些生长规律作出了理论分析 ,阐释了薄膜的微观生长机制。
Many samples of Hg1-xCdxTe / GaAs (2 11) thin films were grown under different growth conditions by metal-organic compound vapor phase epitaxy (MOVPE) and multilayer interdiffusion growth process (IMP) Transmission (FTIR) and Vanderbilt Hall measurements. By comparing many experimental data systematically, the growth rules of the films were summarized and the growth rules were theoretically analyzed to explain the microscopic growth mechanism of the films.