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8月9日出版的最新一期《科学》杂志上,中国科学家的半浮栅晶体管(SFGT)研发成果引起世界关注,因为它有望让电子芯片的性能实现突破性提升。这篇由复旦大学微电子学院张卫教授课题组发表的最新科研论文,也是我国在该学术期刊上发表的首篇微电子器件领域原创性成果。半导体加工面临物理极限,半浮栅晶体管提速节能,或突破瓶颈金属一氧化物—半导体场效应晶体管(MOSFET)是目前集成电路中最基本的器件,工艺的进步让MOSFET的尺寸不断缩小,其功率密度也一直在升高。低功率的隧穿场效应晶体管(TFET)被认为是该器件发展的一大未来技术走向。而我们常用的U盘等闪存芯片则采用了另一种称为浮栅晶体管的器件,
The latest issue of Science in the August 9 issue of Science, China Scientists semi-floating gate transistor (SFGT) R & D results aroused world attention, because it is expected to make a breakthrough in the performance of electronic chips to achieve a breakthrough. This latest research paper published by Zhang Wei, a professor at the School of Microelectronics at Fudan University, is also the first original achievement in the field of microelectronic devices published in this academic journal. Semiconductor processing is facing physical limitations, semi-floating-gate transistors speed up energy-saving, or break through the bottleneck Metal oxide-semiconductor field-effect transistor (MOSFET) is the most basic device in integrated circuits, the progress of the process so that the size of the MOSFET shrinking its power Density has also been rising. Low-power tunneling field-effect transistors (TFETs) are considered as a major future technology development for this device. And we commonly used flash memory chips such as U disk uses another device called floating-gate transistors,