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在不同的衬底偏压下,用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备了ZrN/Zr/ZrN堆栈结构的阻挡层。研究了Zr层的插入对ZrN扩散阻挡性能的影响,结果表明:随着衬底偏压的升高,阻挡层的电阻率降低,ZrN呈(111)择优取向;Zr层的插入使ZrN阻挡层的失效温度至少提高100℃,750℃仍能有效地阻止Cu的扩散,阻挡性能提高的主要原因可能是高温退火时形成的ZrO2阻塞了Cu快速扩散的通道。
The ZrN / Zr / ZrN stack structure barrier was prepared between Si (100) substrate and Cu film by RF reactive magnetron sputtering at different substrate bias voltage. The results show that the resistivity of the barrier decreases with the increase of substrate bias, and the ZrN exhibits a preferential orientation of (111). The intercalation of the Zr layer makes the ZrN barrier layer The failure temperature is increased by at least 100 ℃, and the diffusion of Cu is still prevented effectively at 750 ℃. The main reason for the improvement of the barrier properties may be that the ZrO2 formed during the high temperature annealing blocks the rapid diffusion path of Cu.