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利用射频磁控溅射法并经快速退火处理制备Cu_2SnS_3薄膜,研究了使用SnS_2、Cu_2S混合靶(摩尔比分别为1∶1、1∶1.5、1∶2)及在不同溅射功率(40和80W)条件下所制备Cu_2SnS_3薄膜的晶体结构、物相组成、化学组分、表面形貌和光学特性。结果表明:混合靶的SnS_2、Cu_2S最佳摩尔比为1∶1.5,利用该靶所制备薄膜均结晶;在溅射功率为80 W条件下,所制备薄膜结晶质量和择优取向度高,应变最小,Cu∶Sn∶S摩尔比为1.89∶1∶2.77,平均颗粒直径和平均粗糙度分别为332和0.742 nm,吸收系数达到10~4cm~(-1),禁带宽度为1.32 eV。制备了n-Si/p-CTS异质结器件,器件具有良好的整流特性和光电流响应特性。
The films of Cu_2SnS_3 were prepared by radio-frequency magnetron sputtering and rapid annealing. The effects of SnS_2, Cu_2S mixed target (molar ratios of 1: 1, 1: 1.5 and 1: 2 respectively) 80W), the crystal structure, phase composition, chemical composition, surface morphology and optical properties of Cu_2SnS_3 thin films were investigated. The results show that the optimum molar ratio of SnS_2 and Cu_2S is 1: 1.5. The films prepared by this method are all crystallized. Under the condition of a sputtering power of 80 W, the crystalline quality and the preferred orientation of the prepared films are high and the strain is minimum , The molar ratio of Cu: Sn: S is 1.89:1:2.77, the average particle diameter and the average roughness are 332 and 0.742 nm, respectively. The absorption coefficient reaches 10 ~ 4cm -1 and the band gap is 1.32 eV. The n-Si / p-CTS heterojunction device has been fabricated. The device has good rectification characteristics and photocurrent response characteristics.