提出了1种通用的三维电光器件仿真方法。该方法将有限元电场分析和电光效应耦合波理论相结合,通过求解电光器件的琼斯矩阵,计算了任意光传播方向和任意电场分布下的电光调制特性。以横向调制的Bi4Ge3O12(BGO)晶体光学电压传感器(OVS)为例,对该方法进行了详细说明。讨论了Bi_4Ge_3O_(12)晶体内的非均匀电场及光路偏移对测量精度的影响,给出了在不同的精度等级条件下的最大允许光路偏移。该方法为光学电压传感器和其他电光器件的设计和性能评估提供了参考依据。 A universal three-dimensional electro-optical device simulation method is proposed. The method combines the finite element analysis of electric field and electro-optical coupled wave theory. By solving the Jones matrix of the electro-optical device, the electro-optic modulation characteristics of arbitrary light propagation direction and arbitrary electric field distribution are calculated. The method is described in detail by taking the transversely modulated Bi4Ge3O12 (BGO) crystal optical voltage sensor (OVS) as an example. The influence of nonuniform electric field and optical path deviation on the measurement accuracy of Bi_4Ge_3O_ (12) crystal is discussed. The maximum allowable optical path offset under different accuracy grades is given. The method provides a reference for the design and performance evaluation of optical voltage sensors and other electro-optical devices.