论文部分内容阅读
运用直流磁控溅射法可在金刚石颗粒表面沉积 1 50 nm的金属 Cr层 .在超高真空条件下 ,经 3 0 0—60 0℃的热退火处理 ,可促进 Cr膜与金刚石基底间的界面扩散和反应 .利用俄歇电子能谱研究了 Cr/金刚石颗粒界面的结合状态 ,发现 Cr与金刚石薄膜发生了强烈的界面扩散 ,Cr元素渗入金刚石层达 90 nm,并在界面上发生化学反应形成 Cr的碳化物层 .对界面扩散反应动力学的研究表明 ,Cr/金刚石界面扩散反应的表观活化能为 3 8.4 k J/ mol,界面扩散反应主要由碳的扩散过程控制 .热处理温度越高 ,界面扩散及反应越显著 ,但不利于碳化物层生成的氧化反应速度也会有所增加 ,界面反应产物从 Cr2 C3转变为 Cr2 C物种 .延长热处理时间有利于金属碳化物的生成 ,同样导致界面反应产物从 Cr2 C3转变为 Cr2 C物种
DC magnetron sputtering method can be deposited on the surface of diamond particles at a metal layer of 150 nm in the ultra-high vacuum conditions, the thermal annealing at 300 ~ 60 0 ℃, can promote the Cr film and the diamond substrate between Interface diffusion and reaction.Using Auger electron spectroscopy to study the bonding state of Cr / diamond particle interface, Cr and diamond films were found to have a strong interfacial diffusion, Cr element penetrates into the diamond layer up to 90 nm, and the chemical reaction occurs at the interface The formation of Cr carbide layer.The kinetics of interfacial diffusion reaction showed that the apparent activation energy of the Cr / diamond interface diffusion reaction was 3 8.4 kJ / mol, and the interfacial diffusion reaction was mainly controlled by the diffusion process of carbon.The temperature of the heat treatment High, the more obvious interface diffusion and reaction, but not conducive to the formation of carbide layer oxidation reaction rate will increase, the interface reaction products from Cr2C3 to Cr2C species.Extended heat treatment time is conducive to the formation of metal carbides, the same Resulting in the conversion of interfacial reaction products from Cr2C3 to Cr2C species