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膜层生长不均匀是制备SiGe异质结的研究热点。采用射频磁控溅射方法,通过不断改变溅射时的实验参数,寻找能使Ge纳米薄膜在Si基片上均匀生长的溅射实验条件。实验中,在不同时间条件下分别制备了三种纳米Ge薄膜,通过原子力显微镜对其微观形貌的分析扫描,可以观察到纳米薄膜生长过程中的四个典型阶段,发现Ge/Si的共度生长取得了较好的结果,为SiGe异质结的进一步制备研究奠定了一定的实验基础。
The uneven growth of the film is the research focus of SiGe heterojunction. By using the RF magnetron sputtering method, the experimental parameters of sputtering were changed to find out the sputtering conditions that can make the Ge nano-film grow uniformly on the Si substrate. In the experiment, three kinds of nano-Ge films were prepared under different time conditions. Scanning the microscopic morphology by atomic force microscopy, four typical phases in the growth of the nano-film were observed. It was found that Ge / Si co-growth Good results have been obtained and laid a certain experimental foundation for the further preparation of SiGe heterojunction.