化合物半导体是区别于硅(Si)和锗(Ge)等传统单质的一类半导体材料,主要包括砷化镓(GaAs)、磷化铟(InP)、氮化镓(GaN)、碳化硅(SiC)、氧化锌(ZnO)等。相对于硅材料,化合物半导体性能更加优异,制作出的器件相对于硅器件具有更优异的光电性能、高速、高频、大功率、耐高温和高辐射等特征。当前,全球半导体产业正处于深度变革,化合物半导体成为产业发展新的关注点,我国应加紧产业布局,抢占发展的主动权。 Compound semiconductors are a type of semiconductor material that is distinguished from conventional elements such as silicon (Si) and germanium (Ge) and mainly include gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide ), Zinc oxide (ZnO) and the like. Compared with silicon materials, compound semiconductors have more excellent performance, and the fabricated devices have more excellent photoelectric properties, high speed, high frequency, high power, high temperature resistance and high radiation relative to silicon devices. At present, the global semiconductor industry is undergoing profound changes and compound semiconductors have become the new focus of industrial development. China should step up its industrial layout and seize the initiative in development.