n~+InSb/PHg_(1-x)Cd_xTe异质结的液相外延生长及红外探测器

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本文报道用水平滑舟系统液相外延制备n~+InSb/PHg_(1-x)Cd_(?)Te异质结.该异质结外延层厚度在15~25μm之间,由电镜扫描分析出外延层和衬底之间的介面平直,组分过渡很徒.采用该异质结能制备3~5μm(x=0.3)、8~14μm(x=0.2)两波段的红外探测器,从介绍的单元器件的性能来看,该材料是红外焦平面列阵研究方面极有希望的膺选对象. This paper reports the preparation of n ~ + InSb / PHg_ (1-x) Cd_ (Te) Te heterostructures by liquid-phase epitaxy using a horizontal slide system.The epitaxial layer has a thickness of 15 ~ 25μm and is epitaxial by electron microscopy The interface between the layer and the substrate is straight, and the composition transition is very simple. The heterojunction can be used to prepare two-band infrared detectors of 3 ~ 5μm (x = 0.3) and 8 ~ 14μm (x = 0.2) Of the performance of the unit device point of view, the material is infrared focal plane array research promising candidates.
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