论文部分内容阅读
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。
Electron cyclotron resonance (ECR) microwave enhanced chemical vapor deposition (PECVD) was used and on the surface of a (10 0) monocrystalline silicon wafer with a diameter of 6 .35 cm using nitrogen (Ar 2), argon (Ar) (AlN) films were prepared and characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XRD) and scanning electron microscopy (SEM). The effects of microwave power, substrate temperature and N2 flow rate on the film c Axis orientation, a high-quality, large-area AlN film with a c-axis deviation of less than 5 ° was obtained.