用MOCVD方法生长制备了多层InGaAs/GaAs量子点结构 ,并研制出量子点激光器。研究了多层量子点激光器阈值激射特性与量子点有源区结构之间的关系 ,结果表明激光器的阈值电流密度依赖于量子点的结构。通过采用多层量子点、对量子点层间进行耦合以及采用宽禁带AlGaAs作为量子点层势垒可以有效地降低激光器的阈值电流密度。获得了最低为 2 0A/cm2 的平均阈值电流密度。量子点激光器的激射波长也与有源区结构有关 ,随着量子点层数增加 ,激射峰向长波方向移动。 Multi-layer InGaAs / GaAs QDs were grown by MOCVD and quantum dot lasers were developed. The relationship between the threshold lasing characteristics of multi-layer quantum dot lasers and the quantum dot active region structure is studied. The results show that the threshold current density of lasers depends on the structure of quantum dots. The threshold current density of the laser can be effectively reduced by using multiple layers of quantum dots, coupling quantum dots, and using wide bandgap AlGaAs as the quantum dot barrier. An average threshold current density of 20 A / cm2 was obtained. The lasing wavelength of the quantum dot lasers is also related to the structure of the active region. As the quantum dot layers increase, the lasing peak moves to the long wavelength.