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我们实验研究了(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响。通过测量量子阱的荧光寿命和光学吸收计算,我们能得到不同泵浦光功率下的带间吸收所产生的空穴浓度;相对应地,通过双色磁光科尔旋转技术,我们测量了该GaAs量子阱中电子自旋的动力学过程。结合两者,我们得到了电子自旋弛豫速率与空穴浓度的关系。实验结果表明电子自旋弛豫速率与空穴浓度呈线性依赖关系,验证了BirAronov-Pikus机制主导该体系的电子自旋弛豫。
We experimentally investigated the effect of photogenerated carriers on electron spin relaxation in (110) -GaAs quantum wells. By measuring the fluorescence lifetime and the optical absorption of the quantum wells, we can get the hole concentration generated by the band-gap absorption under different pump optical powers. Correspondingly, we measured the GaAs Dynamics of electron spin in quantum well. Combining the two, we obtained the relationship between electron spin relaxation rate and hole concentration. The experimental results show that the electron spin relaxation rate is linearly dependent on the hole concentration, which verifies that the BirAronov-Pikus mechanism dominates the electron spin relaxation of the system.