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对SrS :Eu和SrS :Eu ,Sm激发初始阶段的荧光上升过程和余辉进行了研究 ,并进一步考证其中电子陷阱的属性 .通过两种样品和两个阶段的比较 ,对陷阱数量和深度的变化、量子效率以及电子俘获和释放、复合过程进行了分析 ,发现Sm离子并不影响陷阱的数量 .利用吸收光谱方法研究了SrS :Eu ,Sm中电子由陷阱能级向导带的跃迁 .通过陷阱饱和 倒空吸收谱差 ,即激励吸收谱及其强度随Eu ,Sm浓度的变化 ,探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响 .结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子 .通过激励吸收谱峰值强度可确切地比较光存储材料在这方面的性能 ,并与光激励谱的测量方法作了对照 .
The fluorescence rise process and afterglow in the initial stage of excitation of SrS: Eu and SrS: Eu, Sm were studied, and the properties of the electron traps were also investigated. By comparing the two samples and two stages, the variation of trap number and depth , Quantum efficiency and electron capture and release, the complex process was analyzed and found that Sm ions do not affect the number of traps.Using absorption spectroscopy to study the electronic transition from trap level to conduction band in SrS: Eu, Sm, The effect of the doping concentration on the trap concentration and the optical storage saturation is discussed.The results show that the effect of the Sm ion is to deepen the trap level to Stable storage of electrons by stimulating the peak intensity of the absorption spectrum can be exactly compared to the performance of optical storage materials in this area and compared with the optical excitation spectrum measurement method.