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为改善垂直腔面发射半导体激光器(VCSEL)的热特性,提高其光电性能,研制了新型辐射桥结构的VCSEL,即采用辐射桥状的电流注入通道取代以往传统结构VCSEL的环形电流注入通道。研究表明辐射桥结构可以降低VCSEL器件的体电阻和热阻,改善器件的模式特性。在同一外延片上,采用相同的工艺制备了辐射桥结构与传统结构两种VCSEL器件,并对两种器件的光电性能进行了对比测试。结果表明,辐射桥结构VCSEL比传统结构的VCSEL微分电阻降低25%,输出功率提高到1.6倍;辐射桥结构的VCSEL具有良好的温度特性与模式特性,80℃时仍能正常激射,60℃时最大输出功率可达17 mW,器件的热阻可达1.95 ℃/mW;器件单模工作,其总体性能远优于传统结构的VCSEL器件。
In order to improve the thermal characteristics of vertical cavity surface emitting semiconductor laser (VCSEL) and improve its photoelectric performance, a new type of radiation bridge structure VCSEL is developed, that is, a radiating bridge current injection channel is used to replace the ring current injection channel of the conventional VCSEL structure. Research shows that the radiation bridge structure can reduce the body resistance and thermal resistance of the VCSEL device and improve the mode characteristics of the device. On the same epitaxial wafer, two kinds of VCSEL devices with a radiation bridge structure and a conventional structure were prepared by the same process, and the photoelectric performances of the two devices were compared. The results show that the VCSEL of the radiation bridge structure is 25% lower than that of the conventional structure and the output power is increased by 1.6 times. The VCSEL of the radiation bridge structure has good temperature characteristics and mode characteristics, When the maximum output power of up to 17 mW, the thermal resistance of the device up to 1.95 ℃ / mW; device single-mode operation, its overall performance far superior to the traditional structure of VCSEL devices.